PANJIT's new automotive MOSFETs now at Rutronik

The field-effect transistors with advanced trench logic level are designed to minimise RDS(ON) while maximising avalanche robustness and optimising space requirements. They are AEC-Q101 qualified and have a high junction temperature of +175°C. The range is available in a variety of compact packages, including DFN3333 and DFN5060-8L.

The products are suited for power management functions, infotainment, oil and water pumps, ADAS, engine control, and sensors. They are an optimal choice for automotive designers looking to simplify their circuits while optimising performance. The automotive MOSFETS are available at Rutronik.

PANJIT is constantly improving the performance of low voltage MOSFETs for a more efficient power supply with less energy consumption and offers transistors for the automotive industry as both standard and logic level components.

The 30V and 40V N-channel power MOSFETs feature advanced trench technology for an excellent figure of merit (FOM – Ron x Qg), lower RDS(on) and lower resistance, and deliver a junction temperature of up to +175°C. The new design also reduces conduction and switching losses while increasing electrical performance. There are Standard level and Logic level available.

The use of the new PANJIT MOSFETs offers developers advantages for an optimised circuit design.

Features at a glance:

• AEC-Q101-qualified and PPAP-ready
• Low RDS(on) to minimise line losses
• Excellent figure of merit (FOM) to minimise driver losses
• Junction temperature of 175°C
• Economical PCB layout

Application examples:

• Engine drive
• Oil and water pumps
• Infotainment
• ADAS
• Sensor technology
• Power supply
• Battery management systems

Overview of available 30V and 40V LV automotive MOSFETs: