Panasonic showcases GaN and SiC MOSFET advances

The company’s X-GaN range of 600V GaN transistors (pictured) were demonstrated in industrial applications, such as a compact inverter and DC/DC converter, where they can increase power density and improve the efficiency of power conversion systems in EVs, HEVs and PV inverters, for example. According to the company, the range overcomes technical challenges typically faced by GaN power devices by virtue of being normally-off, current collapse-free, and use an Ohmic gate contact to prevent gate breakdown, contributing to reliability and robustness. The company also offers a range of application demonstrators and evaluation kits.

Visitors also saw prototypes of power modules with built-in SiC-DioMOS. The company’s SiC MOSFET are based on a DioMOS (Diode-integrated SiC MOSFET) structure which integrates a a high performance unipolar reverse diode in the channel of the MOFSET to reduce SiC module size. According to the company, SiC power devices can realise low-loss operation superior to that of silicon power devices and can save energy in high current, high voltage applications.

The company’s electro-materials are designed to improve reliability and reduce the size of power electronics and automotive parts. It offers encapsulation materials for SiC or GaN power devices and reinforcement materials to improve mounting reliability, especially in automotive applications.

Its Soft-PGS is one of the thinnest thermal solutions and the latest addition to its Pyrolytic Highly Oriented Graphite Sheet (PGS) portfolio. Its thermal conductivity of 28W/m K and compressibility of 40%, make it easy to handle. The graphite sheet consists of a 2D carbon matrix which is only 200µm thick, and disperses and transfers heat along X,Y and Z axes, to protect electronics like server units, IGBT modules or common inventers.

Thinner still is NASBIS (Nano Silica Balloon Insulation Sheet). The thermal insulation sheet is available in a choice of thicknesses (50, 100, 500, or 1000μm) and has low thermal conductivity of 0.018 to 0.024W/mK. In battery packs, it reduces the possibility of a rise in temperature in the adjacent cell, as well as contributing to reductions in size and weight.