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ON Semiconductor Extends High-Voltage Power Solutions Offerings with 30 Volt N-Channel Power MOSFETs with Integrated Schottky Diodes

7th April 2010

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Datasheet

ON Semiconductor has broadened its portfolio of N-channel power MOSFET devices with the introduction of new 30 V products with integrated Schottky diodes. The NTMFS4897NF, NTMFS4898NF and NTMFS4899NF have maximum RDS(on) values of 2 mΩ, 3 mΩ and 5 mΩ respectively at 10 V, optimized for synchronous side in buck converter applications to achieve higher power efficiency. Typical gate charge specifications of 39.6 nC, 25.6 nC and 12.2 nC respectively (at Vgs of 4.5 V) ensure that switching losses are also kept to a minimum.

Typical applications for ON Semiconductor’s new power MOSFETs include dc-dc conversion, point-of-load conversion and low side switching tasks for servers, telecom network infrastructure, PCs, notebook computers and games consoles.

“The integrated Schottky improves efficiency and waveforms by reducing dead time conduction losses facilitated by the integration into the same die as the primary FET structure,” said Paul Leonard, vice president and general manager of the Power MOSFET business unit at ON Semiconductor. “The new devices provide our customers with a broader array of products and solutions to solve unique design challenges.”