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NXP Claims Breakthrough in MOSFET Performance with Sub 1 MilliOhm MOSFET in a Power S08 Package

8th July 2009

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NXP Semiconductors has announced an n-channel sub 1 milliOhm 25V MOSFET, PSMN1R2-25YL , boasting the lowest ever RDSon and best in class Figure of Merit. This is the lowest ever RDSon MOSFET in a Power-SO8 package (Loss Free package: LFPAK) and is an extension to NXP’s existing MOSFET portfolio. The newest generation MOSFET combines the high performance Power-S08 LFPAK package with latest Trench 6 generation silicon and offers numerous performance and reliability advantages in a wide variety of demanding applications such as: power OR-ring, motor control and high efficiency synchronous buck-regulators.

“The technology for producing MOSFETs is an ongoing race to improve performance,” says John David Hughes, Senior International Product Marketing Manager of NXP. “We are using innovative techniques in the new Trench 6 process which further reduce the on-resistance. There are many advantages of the new Trench technology to our customers such as improved switching efficiency from the silicon and superior electrical and thermal resistance from the package. NXP’s Power-S08 (LFPAK) package is compatible with all widely accepted Power SO-8 PCB footprints.”

NXP’s Trench 6 MOSFETs, PSMN1R2–25YL, has a typical RDSon of 0.9 mOhm for a 25V part in Power-S08 (LFPAK), and 1.0 mOhm (typical) for a 30V part.

In addition to launch of the world’s lowest RDSon MOSFET, NXP is announcing a new portfolio of products aimed at power supply, motion control, and industrial markets. The range includes products with operating voltages of 25, 30, 40 and 80 volts, packaged in Power-S08 (LFPAK) and TO220.