ON Semiconductor’s new family of trench-based low forward voltage Schottky rectifiers deliver improved switching efficiency

The new NTST30100CTG, NTST20100CTG and NTSB20U100CTG family of devices utilize a trench topology that enables exceptionally low forward voltage drop and reduced leakage current. This results in low conduction losses and a substantial improvement in circuit efficiency - helping design engineers achieve regulatory requirements without the added complexity, such as synchronous rectification.

This LVFR family utilizes a trench MOS structure that enables an enhanced conduction zone under forward bias, resulting in significant reduction in forward voltage drop. Under reverse bias, this structure creates a “pinch-off” effect resulting in reduced leakage current. Unlike planar Schottky rectifiers, the LVFR’s switching performance is strong across their entire operating junction temperature range of -40 °C to +150 °C.

To demonstrate the advantages of LVFR’s, the company compared the performance of its 30A, 100V LVFR (NTST30100SG) with a standard 30A, 100V planar Schottky rectifier. Data measured in a 65W power adapter showed a 1% efficiency improvement using LVFR versus planar Schottky. This significant increase in efficiency can allow the power supply designer to meet regulatory requirements without the added complexity and cost of solutions, such as synchronous rectification.

“As our customers continuously strive to achieve higher efficiencies in their product designs, older planar generations of Schottky rectifiers simply cannot cost effectively deliver the performance and efficiency of the trench LVFR family,” said John Trice, senior director and general manager of ON Semiconductor’s Power Discrete Division. “LVFR’s superior forward voltage drop and reverse leakage performance over extended temperature ranges exceed our customer’s demanding specifications for power efficiency improvement”, he added.