Home > Products > Vishay Siliconix 40 A DrMOS Solution Enables Operating Frequencies in Excess of 1 MHz and Better Than 93 % Efficiency, Compatible With 3.3 V and 5 V PWM Logic Levels

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Vishay Siliconix 40 A DrMOS Solution Enables Operating Frequencies in Excess of 1 MHz and Better Than 93 % Efficiency, Compatible With 3.3 V and 5 V PWM Logic Levels

9th May 2011

Vishay

ES Admin

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Datasheet

Vishay announced an integrated DrMOS solution providing PWM-optimized high-side and low-side n-channel MOSFETs, a full-featured MOSFET driver IC, and a bootstrap diode, all in a single low-profile, thermally enhanced PowerPAK MLP 6x6 40-pin package.

The new SiC779CD is fully compliant with the DrMOS 4.0 specification for voltage regulators (VRs) in servers and desktop computers, graphics boards, workstations, game consoles, and other high-power CPU-based systems. The device enables operating frequencies in excess of 1 MHz and high efficiency of greater than 93 %.

The SiC779CD's advanced gate driver IC accepts a single PWM input from the VR controller and converts it into the high- and low-side MOSFET gate drive signals. The device's 5 V PWM input is compatible with all controllers and especially designed to support controllers with a tri-state PWM output function.

The regulator operates from an input voltage range of 3 V to 16 V and delivers up to 40 A of continuous output current. Its integrated power MOSFETs are optimized for output voltages in the range of 0.8 V to 2.0 V, with a nominal input voltage of 12 V. The SiC779CD can also deliver very high power at a 5 V output for ASIC applications.

The device's driver IC incorporates circuitry to automatically detect light-load conditions and can automatically enable skip mode operation (SMOD) in systems that are designed to benefit from high light-load efficiency. An adaptive dead time control helps to further improve efficiency at all load points. Protection features include UVLO, shoot-through protection, and a thermal warning feature that alerts the system in case of an excessive junction temperature.

Integration of the driver IC and power MOSFETs in the SiC779CD reduces power losses and lessens the effect of parasitic impedances associated with high-frequency discrete power stage implementations. Designers can opt for high-frequency switching to improve transient response, save on costs for output filter components, and achieve the highest power density possible in multiphase Vcore applications.

The device is halogen-free according to the IEC 61249-2-21 definition and compliant to RoHS directive 2002/95/EC.