Vishay Siliconix 35-A DrMOS Solution Integrates MOSFETs and Driver ICs in Compact 6-mm Square Package for Voltage Regulators in CPU-Based Systems

The SiC769 operates from an input voltage range of 3 V to 16 V and delivers up to 35 A of continuous output current. Its integrated power MOSFETs are optimized for output voltages in the range of 0.8 V to 2.0 V, with a nominal input voltage of 12 V. The SiC769 can also deliver very high power at a 5-V output for ASIC applications.

The SiC769’s advanced gate driver IC accepts a single PWM input from the VR controller and converts it into the high- and low-side MOSFET gate drive signals. The PWM input is compatible with all controllers and especially designed to support controllers with tri-state PWM output function. The driver IC incorporates circuitry to automatically detect light load conditions and can automatically enable skip mode operation (SMOD) in systems that are designed to benefit from high light load efficiency. An adaptive dead time control helps to further improve efficiency. Protection features include UVLO, shoot-through protection, and a thermal warning feature that alerts the system in case of an excessive junction temperature.

Integration of the driver IC and power MOSFETs in the SiC769 reduces power losses and lessens the effect of parasitic impedances associated with high-frequency discrete power stage implementations. The SiC769 also incorporates advanced packaging that reduces the power losses in the package by as much as 30 % compared to competitive technologies. Designers can opt for high-frequency switching to improve transient response, save on costs for output filter components, and achieve the highest power density possible in multi-phase Vcore applications. This in turn saves PCB area and provides more real estate for the user’s key competitive technologies.