New lineup of automotive-grade SiC MOSFETs announced

However, although EVs are becoming more widespread, their relatively short driving range remains problematic.

To improve driving distance, batteries are trending towards larger battery capacities with shorter charging times.

This, in turn, demands high power and efficiency on board chargers such as 11 and 22kW, leading to increased adoption of SiC MOSFETs. In addition, higher voltage batteries (800V) require power devices featuring low loss and higher withstand voltages.

To meet these needs, ROHM added ten new models to its lineup of AEC-Q101 qualified MOSFETs that utilises a trench gate structure. The result is the industry’s largest portfolio, available in both 650 and 1,200V variants.

And going forward, ROHM will strive to further improve quality and strengthen its lineup to increase device performance, reduce power consumption, and achieve greater miniaturisation.

According to the company, in December 2010 ROHM was the first in the world to succeed in mass producing SiC MOSFETs and continues to lead the industry in developing and mass producing SiC power devices.

Particularly in the automotive market where demand is increasing, ROHM quickly established automotive-grade quality and began supplying SiC Schottky barrier diodes for on board chargers in 2012 and SiC MOSFETs for DC/DC converters and on board chargers from 2017.

Under a corporate objective of ‘Quality First’ established since its founding, ROHM utilises a vertically integrated production system within the group that infuses quality into every process, from development to final testing, while also providing reliability traceability and an optimised supply chain.

For SiC power devices as well, an integrated production system that covers everything from wafer fabrication to packaging is used to eliminate ‘black boxes’ during the manufacturing process, ensuring higher reliability, and quality.