NEC Introduces Ultra-Thin New MOSFET Devices in a SOT-23F Package

Package heights of the new MOSFETs are reduced by 0.1 mm compared to current generation SOT-23 package by employing flat lead package. The new MOSFETS are also capable of achieving up to 4.5 A (N0301N) of current even with mounting area equivalent of SOT-23 package.

As the recent industry-wide trend for mobile and industrial applications expands, demand for MOSFETs with advanced functions to realize DC/DC converters and load switches is growing accordingly. To address these growing needs, NEC Electronics has been actively developing its business in this field launching MOSFETs with packages that manage low on-resistance, using the company’s advanced techniques such as SuperJunction1 technology, multi-bonding and wire-less bonding technologies. Yet, there is still strong customer expectations for smaller MOSFET packages with up to 4A current capability that allow designers to develop lighter and slimmer products, which is exactly what the NEC Electronics’ new MOSFETs provide. NEC Electronics believes this new lineup of MOSFETs to be most suitable for consumer applications.

NEC Electronics improved the lead structure of the new MOSFETs’ packages, employing flat lead structure instead of the conventional gull wing structure. This makes it possible to decrease the package height by 0.1 mm enabling designers to realize a smaller design footprint.

By adopting flat lead structure, packages of the new MOSFETs are capable of carrying larger chips, yet still provide the high current capabilities of up to 4.5 A (N0301N). These larger chips enable the new MOSFETs to reduce on-resistance of up to 20 percent compared to the existing MOSFETs.

The new devices include three P-channels and one N-channel MOSFET offering designers to choose the best option depending on their systems.