Power
NEC Electronics Europe Expands NP-Series With One of Industry’s Lowest On-State Resistance PowerMOSFET
NEC Electronics Europe today introduced the TO-263-7 PowerMOSFET series as the newest addition to the company’s NP Series of low-voltage power-management devices. As part of the NP Series, the new MOSFET devices feature an innovative fabrication process and advanced packaging solutions designed to reduce leakage current, manage heat dissipation more efficiently and enable one of the industry’s lowest on-state resistances Rds(on), of 1,5 milliohms (maximum). These new PowerMOSFET are ideal for applications such as automotive, low-voltage DC motor control and uninterruptible power supplies, where high current capability, as well as stringent power management and reliability are required.
WithThe TO-263-7 PowerMOSFET series is manufactured in the UMOS-4 process, which is a trench technology and achieves an ultra-fine design rule of 0.25 m. This results in higher cell density, up to 160M cells/inch2, enabling chip designers to lower on-resistance over a given area of silicon. The new PowerMOSFET also features an advanced packaging developed by NEC Electronics using an unique multi-bonding technology that doubles the number of bonding wires from two to four wires. The additional wires allow the NEC Electronics MOSFETs to manage high currents with very low on-resistance in relatively small packages by limiting the on-resistance yet still improving current-carrying capabilities. With an ultra-low on-state resistance of Rds(on) = 1,5 milliohms, max. (VDSS = 40V; VGS =10V), the new TO-263-7 PowerMOSFET also helps to reduce the amount of the PCB dedicated to handling heat dissipation
The NP Series is part of NEC Electronics Europe’s family of low-voltage switching devices that provides efficient power management for power supplies, automotive systems, motor control, office, robotic and uninterruptible power applications.