Navitas showcase GaN and SiC power semiconductors at PCIM

Featuring over 400 international technical papers, with a comprehensive technology and application-focused conference programme, PCIM – which takes place in Nuremberg, Germany, from 9^th to 11^th May - is an event for professionals involved in the fields of “power, control and intelligent motion”.

Visitors to the Navitas exhibition booth (Hall 9, #525) will discover how GaN and SiC deliver the advanced performance, functionality, reliability and ease-of-use demanded by next-generation EV, solar, energy storage, home appliance and industrial drives. Highlights include GaNFast power ICs that integrate GaN power, sensing and control in a single device, and robust, high-voltage, high-efficiency GeneSiC SiC semiconductors optimised for reliable operation in harsh-environment, high-power designs.

“PCIM is a key event in the power-electronics calendar,” said, Alessandro Squeri, Navitas’ Senior Director for European sales. “Continuing our ‘Electrify our World’ mission, Navitas’ demonstrations, papers and panel discussions provide critical insight into how next-generation GaN and SiC deliver power-conversion and fast-charging solutions that could reduce global CO₂ emissions by as much as six Gigatons per year by 2050.”

During this year’s conference Navitas will participate in the following sessions:

Tuesday 9^th May

• “GaN Power ICs Drive Efficiency and Size Improvements in BLDC Motor Drive Applications.”,
  • 11.40am: GaN Devices Session, Brüssel 1, Alfred Hesener, Senior Director, Industrial Applications
• “GaN Power ICs Enable 300cc 700kHz 300W AC-DC Converter.”
  • 11.40am: Power IC Session, München 2, Tom Ribarich, Senior Director Strategic Marketing
• “GaN-based High-Frequency, High-Power-Density, 2-in-1 Bi-directional OBCM Design for EV Applications.”
  • Power Electronics for Electric Cars Poster Session, Foyer, NCC Mitte, Bin Li, Senior Applications Manager, for Minli Jia, Sr. Staff Applications Engineer
• “Reliability and Quality Requirements for SiC and GaN Power Devices.” (panel)
  • 12:10pm, Hall 7, #480, Stephen Oliver, VP Corporate Marketing & Investor Relations
• “High-Frequency High-Efficiency LLC Module with Planar Matrix Transformer for CRPS Application Using GaN Power IC.”

Wednesday 10^th May

• “Wide Bandgap Design with GaN HEMT and Vertical GaN.” (panel)
  • 1:05pm, Hall 7, #480, Stephen Oliver, VP Corporate Marketing & Investor Relations

Thursday 11^th May

• 2:20pm, DC-DC Converters Session, Brüssel 1, Bin Li, Senior Applications Manager