N-channel power MOSFETs deliver 3.7 and 11.5mΩ resistance

7th February 2018

Toshiba

Alice Matthews

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Datasheet

Two new 100V additions to Toshiba Electronics Europe's low-voltage U-MOS IX-H N-channel power MOSFET series have started to be shipped. The new devices are suited to power supply applications in industrial equipment as well as motor control applications. Fabricated with Toshiba’s latest low-voltage U-MOS IX-H trench process, which optimises the element structure, the TPH3R70APL and TPN1200APL deliver what is supposedly the industry’s lowest-in-class on-resistance of 3.7 and 11.5mΩ respectively.

The devices exhibit low output charge (QOSS: 74/24nC) and low gate switch charge (QSW: 21/7.5nC) and allows for a 4.5V logic level drive.

Compared with current devices that the U-MOS VIII-H process, the new devices have lower key figures of merit for MOSFETs for switching applications including RDS(ON) • Qoss, and RDS(ON) • QSW.

The TPH3R70APL is housed in a 5x6mm SOP advance package and can handle drain currents (ID) up to 90A while the TPN1200APL is in a 3x3mm TSON advance package and handles ID levels up to 40A.

Toshiba Electronics Europe will continue to expand its MOSFET portfolio in line with market trends in order to continue to improve power supply efficiency.