N-channel MOSFET offers RDS(ON) down to 0.95 mΩ

Offered in the 3.3 mm by 3.3 mm thermally enhanced PowerPAK 1212-8S package, the Vishay Siliconix SiSS52DN features on-resistance of 0.95 mΩ at 10 V, a 5 % improvement over the previous-generation product.

In addition, the device delivers on-resistance of 1.5 mΩ at 4.5 V, while its 29.8 mΩ*nC on-resistance times gate charge at 4.5 V — a critical figure of merit (FOM) for MOSFETs used in switching applications — is one of the lowest on the market.

The SiSS52DN's FOM represents a 29 % improvement over previous-generation devices, which translates into reduced conduction and switching losses to save energy in power conversion applications.

The MOSFET is ideal for low side switching for synchronous rectification, synchronous buck converters, DC/DC converters, switch tank topologies, OR-ring FETs, and load switches for power supplies in servers and telecom and RF equipment.

By delivering high performance in isolated and non-isolated topologies, the MOSFET simplifies part selection for designers working with both.

The device is 100 % RG- and UIS-tested, RoHS-compliant, and halogen-free.

Samples and production quantities of the SiSS52DN are available now, with lead times of 12 weeks.