N-channel MOSFET driver ICs for rapid charging applications

15th March 2018

Toshiba

Lanna Deamer

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Datasheet

Toshiba Electronics has announced the launch of two new N-channel MOSFET drivers suitable for rapid-charging and other high current applications.

The new TCK401G (active high) and TCK402G (active low) charge pump driver ICs are suitable for high current mobile charging applications when used in conjunction with low RDS(on) N-channel MOSFETs. The driver ICs support several built-in safety functions, including overvoltage protection, inrush current reduction and auto output discharge.

Operating from an input voltage in the range 2.7-28VDC, the devices draw just 121μA of quiescent current (IQ). Switching times for the gate voltage (VGATE) are 0.58ms (ON) and 16.6μs (OFF).

A high efficiency power supply circuit can be realised by using one of the new drivers with one or two external N-channel MOSFETs that have a maximum voltage rating and on-resistance suitable for the intended application. As an example, the combination of a TCK40xG driver IC and the low on-resistance SSM6K513NU MOSFET is suitable for mobile or consumer applications, as it makes it possible to build a 100W power supply with a very compact footprint.

Even with the high level of integration, the driver ICs are still housed in the small WCSP6E package, measuring just 0.8x1.2x0.55mm.