Multi-bit TVS diodes protect high-speed interfaces from ESD

Electronic devices such as smartphones, wearable devices, tablet PCs as well as industrial and office equipment are offering advanced high performance features and continue to get smaller in size. Therefore, in such devices the core semiconductor devices have to continuously offer a higher performance while following the trend of miniaturisation.

As a result, these core devices are increasingly sensitive to ESD and surge voltages which makes suitable protection circuits a vital requirement. Especially, for USB Type-C, HDMI and other high-speed interfaces, low-capacitance products are required to prevent distortion of transmission signals.

The new TVS diodes offer improved protection with lower dynamic resistance and a lower clamp voltage. They are housed in small LGA packages (DFN5 [1.3x0.8mm] for 4-bit, DFN6 [1.25x1.0mm] for 2-bit) in a flow-through design. It enables easy board layout as the package can be placed directly on the high-speed bus lines. The flow-through design together with the typical diode capacitance of 0.2pF also minimises the signal distortion of high-speed interfaces.

The TVS diodes are fabricated with Toshiba’s proprietary ESD Array Process IV (EAP-IV process) that realises 20% lower dynamic resistance than current 4-bit DF5G7M2N product while enhancing overall protection by increasing ESD immunity level and reducing surge voltage impact on latter stage devices.

The new TVS diode line-up includes 4-bit (DF5G5M4N, DF5G6M4N) and 2-bit (DF6D5M4N, DF6D6M4N) products for both 3.3 and 5.0V signal lines, allowing users to select the product that matches the interface voltage of their system.