MOSFETs save space & reduce synchronous rectification losses

28th January 2014

Toshiba

Staff Reporter

0 0

32 devices, designed to save space and reduce losses in synchronous rectification, have been announced by TEE. The 32 devices will be added to the company's existing UMOS VIII-H ultra-efficient MOSFET family and reduce space and losses in not just synchronous rectification, but in primary and secondary side switching applications and other high-speed designs requiring device ratings from 60V to 250V.

Offering voltage rating options of 60V, 80V, 100V, 150V, 200V and 250V, the MOSFETs are each available in a choice of TSON Advance or SOP Advance flat SMD packages. The company claims that many members of the device family deliver best in class RDS(ON), whilst respective board mounting areas are only 3 x 3mm and 5 x 6mm. For example the 100V TPH4R50ANH (maximum RDS(ON) of 4.5mΩ at V_GS= 10V) and the 200V TPH2900ENH (maximum RDS(ON) of 29mΩ at V_GS= 10V) combine the lowest RDS(ON) ratings with very low gate charge and input capacitance.

Based on the company's eighth generation UMOS trench semiconductor process, the MOSFETs are able to deliver significant improvements in RDS(ON)and input capacitance characteristics to optimize efficiency and switching speeds while minimizing radiated noise.

Applications for the 60V – 250V MOSFETs include AC/DC and DC/DC conversion in industrial systems, digital home appliances, computing equipment and gaming products. The 80~150V devices are particularly well-suited to power supplies in various elements of telecommunications application.