MOSFETs reduce losses & board space

20th May 2015

Toshiba

Jordan Mulcare

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Toshiba Electronics Europe has expanded its family of high-efficiency, low-voltage MOSFETs by adding 30 and 60V devices to its existing 40V offering. These devices will be available in ultra-compact, thermally efficient DSOP Advance package options that significantly improve heat dissipation through dual-sided cooling.

Comprising one 30V device and one 60V device, the latest N-channel MOSFETs are based on Toshiba’s next-gen U-MOS IX-H trench semiconductor process. This process has been designed to deliver ‘best-in-class’ efficiency across a wide range of load conditions by driving down on resistance and improving switching efficiency by reducing output charge.

The MOSFETs will help designers to reduce losses and board space in a variety of power management circuits including high-side and low-side switching in DC/DC conversion and secondary side synchronous rectification in AC/DC designs. The technologies are also suitable for motor control and for protection circuit modules in electronic equipment based on Li-ion batteries.

The maximum RDS_(ON) rating for the 30V MOSFET is 0.6mΩ, while the typical C_OSS rating is 2160pF. The 60V device features a maximum RDS_(ON) rating of 1.3mΩ and a typical C_OSS rating of 960pF. These ratings ensure enhanced flexibility for optimising performance in a given application.

The two UMOS IX-H MOSFETs are available in low-profile, surface mount, DSOP Advance packages measuring 5x6mm. Choosing the DSOP Advance solution can help to significantly reduce system temperatures, allowing the use of smaller heatsinks or even eliminating the need for a heatsink altogether. The MOSFETs are suitable for channel temperatures of up to 175°C.