MOSFETs feature on resistance as low as 24mΩ

These devices were developed using a charge compensation principle and proprietary process technology, resulting in power MOSFETs with significantly reduced on resistance and gate charge. A low on-state resistance reduces the conduction losses. It also lowers the energy stored in the output capacitance, thereby minimising the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also, due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements.

Designed for such applications as PFC circuits, switched-mode and resonant-mode power supplies, DC/DC converters, AC and DC motor drives, solid state relays, and robotic and servo control, these MOSFETs enable higher efficiency along with high power density and cooler system performance.

These 650V X2 power MOSFETs are available in the following international standard size packages: TO-252, TO-220 (standard or over-molded), TO-263, SOT-227, TO-247, PLUS247, and TO-264. Some example part numbers include IXTY2N65X2, IXTA4N65X2, IXTP8N65X2, and IXTK102N65X2, with drain current ratings of 2, 4, 8, and 102A, respectively.

“Our Ultra Junction technology has a better figure of merit when it comes to power MOSFET performance and cost of manufacturing. Our scientists have developed it with IXYS’ standards of ruggedness that made our power MOSFETs world famous. With the combination of reduced on resistance and improved switching and thermal performance, these devices offer the best cost performance to our customers, even better than SiC MOSFETs, especially in ruggedness and reliability,” commented Dr. Nathan Zommer, CEO and Founder, IXYS.