MOSFET increases efficiency in mobile devices
Designed to increase efficiency in mobile computing devices, the -20V Siliconix Si7157DP signals an expansion of Vishay's TrenchFET p-channel Gen III power MOSFET portfolio. Offering on-resistance of 0.0016Ω and 0.0020Ω at -10 V and -4.5 V ratings, respectively, the MOSFET is optimized for load and battery switches in power management applications for notebook computers.
The on-resistance of the Si7157DP allows designers to achieve lower voltage drops and conduction losses in their circuits, enabling more efficient use of power and longer battery run times — especially in peak load conditions. The device's compact 6.15mm by 5.15mm PowerPAK SO-8 package footprint area saves valuable PCB space. Further to this, the device's lower voltage drop at peak currents also provides a larger voltage margin over the UVLO (undervoltage lockout) level, helping prevent undesired undervoltage lockout conditions with the load.
100% Rg- and UIS-tested, the MOSFET is halogen-free according to the JEDEC JS709A definition and compliant to RoHS Directive 2011/65/EU. Like other Vishay Siliconix p-channel Gen III MOSFETs, the Si7157DP is built on the latest process technology that packs one billion transistor cells into each square inch of silicon.
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