MOSFET fulfills needs of wireless charging circuits
Designed for power management applications in mobile devices, the SSM6N58NU low-resistance dual N-channel MOSFET meets the needs of high current as well as wireless charging circuits used in smartphones, tablets and laptops. Toshiba Electronics Europe's latest MOSFET ensures efficiency and switching speeds through a design that minimizes ON resistance (RDS(ON)) and input capacitance (CISS).
Input capacitance is as low as 129pF, while RDS(ON) measures 67mΩ at VGS=4.5V. This enables low loss and high speed operation with a turn-on time (ton) of 26ns, and a turn-off time (toff) of 9ns. The low gate charge of Qg=1.8nC (@ ID=4A) significantly reduces the AC dissipation at 3MHz enabling usage in DC converter applications. Independent MOSFET configuration and high ESD protection levels of ≥2kV also enables usage in battery protection circuits.
The SSM6N58NU meets these needs with a maximum DC drain current (ID) of 4A and maximum pulsed drain current (IDP) of 10A. Furthermore, because the gate charge and capacitance of the MOSFET is significantly reduced, fast switching is supported.
Available in a UDFN6 surface mount, the device requires just 2mm x 2mm of board space with a body height of just 0.75mm. The device offers a power dissipation of 2W and can withstand channel temperatures up to 150°C. This is achieved due to the flat body of the structure.
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