MOSFET extends battery life in portable applications

18th March 2015

Vishay

Nat Bowers

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Datasheet

Vishay Intertechnology has introduced a TrenchFET 20V n-channel MOSFET which is claimed to provide the industry's lowest on-resistance for any 20V device in the compact 1mm square footprint. The device is designed to save space, decrease power consumption and extend battery usage in wearable devices, smartphones, tablets and SSDs.

Optimised for use as a load switch, small-signal switch and high-speed switch in power management applications, the Si8410DB features extremely low on-resistance of 37mΩ at 4.5V, 41mΩ at 2.5V, 47mΩ at 1.8V and 68mΩ at 1.5V. Compared with the closest competing devices in the CSP 1mm square package, these ratings represent an improvement of 26% at 4.5V, 32% at 2.5V, 35% at 1.8V and 27% at 1.5V.

Compared with devices in the DFN 1mm square package, on-resistance is 32% lower at 4.5V, 40% lower at 2.5V, 48% lower at 1.8V and 43 % lower at 1.5V. The device's low on-resistance, ratings down to 1.5V and ±8V_GS provide a combination of safety margin, gate drive design flexibility and high performance for lithium ion battery-powered applications.

The Si8410DB offers an extremely low on-resistance per area of 30mΩ/mm², 28% lower than the closest competing 20V MOSFET in a 1mm square plastic package, to save space and reduce battery power consumption in mobile applications. The device's low on-resistance means a very low voltage drop at DC and pulse peak currents, so less power is wasted as heat. The combination of lower on-resistance and lower thermal resistance results in up to 45% and 144% lower temperature rise than the next-best devices in CSP and 1mm square packages, respectively.

Offered in a chipscale MICRO FOOT package with an ultra-low 0.54mm maximum height, the Vishay Si8410DB is available now for sampling and in production quantities, with lead times of 13 weeks for larger orders.