MOSFET enhances reliability in portable electronics

19th February 2015

Vishay

Nat Bowers

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Datasheet

Providing increased power density and reliability for portable electronics, a 20V n-channel TrenchFET power MOSFET has been introduced by Vishay Intertechnology. According to the manufacturer, the SiA466EDJ offers the industry's highest package-limited continuous drain current for a 20V MOSFET in the 2x2mm footprint area: its 25A package-limited continuous drain current is 13% higher than the closest competing device.

It is also claimed to be the only such device with a VGS rating of ±20V to provide integrated ESD protection. In load switch applications, the high current rating provides an additional safety margin for large in-rush currents and fault conditions including short circuits. The MOSFET's 2500V integrated ESD protection prevents static damage from handling or human body contact.

The device is a versatile solution for power management in portable equipment designs. The combination of a high current rating and excellent on-resistance times gate charge figure of merit optimises synchronous buck converters and load switches in wireless and fast battery chargers, smartphones, tablets, notebook computers and e-locks.

To increase efficiency in high-frequency switching applications, the SiA466EDJ's low on-resistance of 9.5mΩ (at 10V), 11.1mΩ (at 6V) and 13.0mΩ (at 4.5V) reduces conduction losses, while its low 6.3nC typical gate charge and 0.9Ω gate resistance minimise switching losses. The MOSFET is 100% R_G-tested, RoHS-compliant and halogen-free.

Supplied in the ultra-compact thermally enhanced PowerPAK SC-70 package, the SiA466EDJ is available now for sampling and in production quantities with lead times of 13 weeks for large orders.