Mitsubishi Electric's Ku Band GaN HEMT for Satellite Applications delivers 50W

Due to its new high-voltage gate structure combined with an optimized layout the new MGFK47G3745 achieves a high linear gain of 9dB. The device is internally impedance-matched and offers a third-order intermodulation specification of -25dBc at 43dBm output power.

Using this device will enable design engineers to reduce the number of high frequency transistors by 50%. At the same time it also contributes to higher power savings and downsizing of the VSAT block up converter. While a conventional amplifier based on 25W GaAs Heterostructure FETs needs six individual 25W HFETs to provide an output power of 100W, a design based on the new MGFK47G3745 requires only three GaN HEMTs in order to achieve the same output power rating of 100W.

The new GaN HEMT from Mitsubishi Electric operates at a supply voltage of 24V with a quiescent drain current of 1A in the specified band (Ku band: 13.75 – 14.5GHz).