New C-Band GaN HEMT Amplifiers for VSAT Applications by Mitsubishi Electric

The two new devices have a power added efficiency (PAE) more than 43% and a high voltage operation (VDS=40V. Due to the good linearity of the GaN process the 100W device can achieve 3rd-order Inter Modulation (IM3) of -25dBc at 46dBm output power.

GaN amplifiers have become very popular due to their high breakdown-voltage and power density as well as high electron saturation velocity. Furthermore, their ability to contribute to power saving and downsizing of power transmitter equipment make them very attractive and lower the importance of GaAs amplifiers which have been commonly employed in C-band transmitters in the past.