Low RDS(on) 40V MOSFETs deliver high power density

The new devices also offer improved performance in both Avalanche and Linear mode, leading to increased ruggedness and reliability.

Neil Massey, Nexperia’s Product Marketing Manager commented: “The new 8 x 8 mm LFPAK88 MOSFETs combine the latest high performance superjunction silicon technology with our proven LFPAK copper clip technology, which is renowned for delivering significant electrical and thermal performance benefits. The resulting low RDS(on) enables us to pack more silicon in the package, improving power density and shrinking device footprint.”

Measuring just 8x8x1.7mm, the new power MOSFETs also feature class-leading linear mode / safe operating area (SOA) characteristics for safe and reliable switching at high current conditions. SOA at 1ms, 20 VDS operating conditions is 35A due to a combination of silicon and package, while at 10ms, 20 VDS where the package dominates, SOA is 17A. The devices also offer the best single pulse avalanche rating (EAS) at 2.3 J and very strong ID current rating of 500A, which – unlike some competing devices – is a measured rather than theoretical limit.

The size and performance benefits afforded by the Nexperia 8x8mm LFPAK88 MOSFETs enable designers to replace two paralleled old-style components with one new LFPAK88, simplifying manufacturing and increasing reliability.

The AEC-Q101-qualified BUK7S0R5-40H parts suit braking, power steering, reverse battery protection, e-fuse, DC/DC converter and motor control applications. The industrial PSMNR55-40SSH MOSFETs suit battery isolation, current limitation, e-fuse, motor control, synchronous rectification and load switch applications in power tools, appliances, fans, and e-bikes, scooters and wheelchairs.