Low forward voltage for higher system efficiency

2nd January 2018

Enaie Azambuja

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How would your next power electronics application benefit from higher efficiency, greater robustness, and reduced need for thermal management? With negligible reverse recovery, the new LSIC2SD120 Series of SiC Schottky Diodes reduces switching losses dramatically to boost system efficiency. They also support large surge currents and have a high maximum junction temperature of 175°C.

Littelfuse currently offers the new generation of SiC Schottky diodes in 1,200V with current ratings from 5-40A.

Choose from two-lead (TO-220), two-lead (TO-252), three-lead (TO-247) or bare die packages.

The diodes are suitable for the following applications:

Boost diodes in power factor correction
Switch-mode power supplies
Uninterruptible power supplies
Solar inverters
Industrial motor drives
EV charging and power conversion.

Features

Dramatically reduced switching losses compared to Si bipolar diodes
Extremely fast, temperature-independent switching behavior
Positive temperature coefficient for safe operation and ease of paralleling
175°C maximum operating junction temperature
Excellent surge capability

Benefits

Suitable for high-frequency power switching; negligible switching losses; reduced stress on the opposing switch
Larger design margin and relaxed thermal management requirements
Enhanced surge capability and extremely low leakage

The LSIC2SD120A08 series, LSIC2SD120A15 series, and LSIC2SD120A20 series offer current ratings of 8, 15 ,20A, respectively and are provided in the popular TO-220-2L package. Additionally, the LSIC2SD120C08 series offers a current rating of 8A in a TO-252-2L package. The merged p-n Schottky (MPS) device architecture of the GEN2 SiC Schottky Diodes enhances surge capability and reduces leakage current. Replacing standard silicon bipolar power diodes with the new GEN2 SiC Schottky Diodes allows circuit designers to reduce switching losses dramatically, accommodate large surge currents without thermal runaway, and operate at junction temperatures as high as 175°C. This allows for substantial increases in power electronics system efficiency and robustness.

“The latest GEN2 SiC Schottky Diodes are ideal solutions for circuit designers who need to reduce switching losses, accommodate large surge currents without thermal runaway, and operate at higher junction temperatures,” said Michael Ketterer, Global Product Marketing Manager, Power Semiconductors at Littelfuse. “They expand the component options available to circuit designers striving to improve the efficiency, reliability, and thermal management of the latest power electronics systems.”

Find out more here.