Littelfuse demonstrates SiC and IGBT roadmap

The IGBTs combine MOSFET gate drive with high current and low saturation voltage switching capability of bipolar transistors, for high efficiency and fast switching, says the company.

Covering 600, 1,200 and 1,700V, the WB series, D series and S series are half bridge modules, measuring 152 x 62 x 17mm, 108 x 62 x 30mm and 94 x 34 x 30mm. The W series and the H series are available as six-pack and PIM 1,200V modules. They are also offered in industry standard packages, measuring 122 x 62 x 17mm and 107 x 45 x 17mm.

The collaboration with Monolith Semiconductor will focus on SiC development, with SiC MOSFET development. It introduced two power semiconductor families, of SiC Schottky diodes and silicon IGBTs.

Pictured here is Kevin Matocha, president, Monolithic Semiconductor at the Littelfuse stand at PCIM 2016, with a demonstration of the company’s SiC MOSFET technology, with a 5kW buck converter, with 675V input (nominal) and 350V nominal output. The converter switches at 20kHz which is a higher frequency than can be achieved with silicon IGBTs, says the company. This means that the size of the filter can be reduced, with 98.4% efficiency. Maximimum operating temperature is 175°C for use in harsh, demanding environments.