IR’s New DirectFETplus Power MOSFET Family for DC-DC Switching Applications Improves Efficiency up to 2 Percent

The first two DirectFET plus devices in the new family, the IRF6811 and IRF6894, reduce on-state resistance (RDS(on)) and gate charge (Qg) compared to previous generation devices to significantly improve efficiency up to 2 percent. In addition, the devices offer ultra low gate resistance (Rg) enabling further efficiency improvement by minimizing switching losses in DC-DC converters.

The new IRF6811 and IRF6894 chipset leverages IR’s DirectFET® packaging technology and features a new generation of silicon which optimizes key MOSFET parameters to provide a best-in-class solution that delivers excellent performance, high reliability, and small footprint for next-generation computing needs.

The IRF6811 control MOSFET is available in a Small Can while the IRF6894 synchronous MOSFET is offered in a Medium Can. The 25 V DirectFET®plus pair combines industry leading RDS(on) and Rg, combined with low charge to minimize conduction and switching losses. The IRF6894 also features a monolithically integrated Schottky that reduces losses associated with body diode conduction and reverse recovery. The new DirectFET®plus MOSFETs are footprint compatible with previous generation devices.