IR's AUIRF7648M2 and AUIRF7669L2 Automotive DirectFET®2 Power MOSFETs Optimized for Switching Applications

The AUIRF7648M2 and AUIRF7669L2, IR’s first automotive grade DirectFET® devices tailored to DC-DC applications, offer low gate charge and on-state resistance (RDS(on)) to help minimize switching and conduction losses in a variety of switching applications. Moreover, the low parasitic inductance offered by the DirectFET® power package results in excellent high frequency switching performance with reduced waveform ringing which in turn helps limit EMI and filter size.

The AUIRF7648M2 features a PCB footprint 54 percent smaller than a DPak while the AUIRF7669L2 features a PCB footprint 60 percent smaller than a D2Pak. With package current ratings of 179 A and 375 A respectively for each device, the DirectFET® package places no constraint on current capability of the silicon. Moreover, the maximum package current ratings far exceed the limits of traditional DPak and D2Pak packages.

The devices are qualified according to AEC-Q101 standards, feature an environmentally friendly, lead-free and RoHS compliant bill of materials, and are part of IR’s automotive quality initiative targeting zero defects.