Integrated Driver- MOSFET from Renesas

The R2J20651NP conforms to the Integrated Driver-MOSFET (DrMOS) Specifications, Revision 3.0 of the Intel Corporation, which stipulate a 6 mm x 6 mm package size. It incorporates two high-side/low-side MOSFETs and a driver circuit in a single package.



The device achieves the high power supply efficiency by using Renesas’ most recent tenth-generation power MOSFETs that have improvements in efficiency and lower loss. In addition, use of the product can lead to space savings in end product designs since a reduced heat generation allows a smaller heat sink to be used. Also, the number of capacitors and other passive components can be reduced.

The device offers a high thermal dissipation/low-loss package technology. Compared to the earlier Renesas 8 mm x 8 mm package size, the R2J20651NP reduces the mounting area by about one half. Furthermore, since it can handle up to 35 A, it can easily be implemented in high-density DC-DC converters.



The R2J20651NP includes, for the first time in a DrMOS standard product, a temperature detection function that can output a signal of over-temperature when the driver IC temperature exceeds 130°C. This signal can be used according to the needs of the application, for example, by having the system power supply control IC receive this signal and shut down the system. Furthermore, safer power supply systems can be implemented, since abnormal modes and overload states can be detected in advance by having the power device monitor its own temperature and heat generation.



The device also supports a discontinuous operating mode in which the low-side MOSFET is forcibly turned off by internal logic using the LSDBL# connected to the driver IC. This function is effective both at preventing rapid discharge or load side voltage spikes during pre-bias operation when there is already a voltage remaining on the outputs at startup and at increasing efficiency during light-load operation.