Integrated PoE-PD Controllers from ON Semiconductor Meet Upcoming IEEE PoE+ Standard

The UNH tests confirm that these devices can enable PoE+ compliant platforms on the market, and are in line with the evolving high power requirements of the WLAN access point, WIMAX, industrial and IP camera markets.



“Future changes to the IEEE802.3at standard that could result in PoE-PD silicon changes are not anticipated,” said Koen Geirnaert, ON Semiconductor’s PoE-PD product marketing manager. “As such, the NCP1081 and NCP1083 are expected to be in line with the final IEEE802.3at standard. These devices will enable the industry’s first movers to deliver standard PoE+ based platforms to the market.”



ON Semiconductor’s portfolio of integrated PoE-PD products contains four devices. The NCP1081 and NCP1083 provide power levels up to 25.5 watts (W) for applications in line with the draft IEEE 802.3at (D3.1) standard and up to 40 W for proprietary high power PoE applications. The NCP1080 and NCP1082 offer IEEE802.3af compliant power levels. The NCP1082 and NCP1083 are also capable of providing power via an auxiliary parallel supply.



The NCP1080/1/2/3 are pin-compatible and offered in a TSSOP-EP 20 pin package. This feature allows the customer to easily mix-and-match different PoE capabilities on different platforms.



The PoE-PD portfolio utilizes ON Semiconductor’s automotive qualified, high-voltage SmartPower process to provide superior cable electrostatic discharge (CESD) and surge protection levels compared to other integrated PoE-PD /DC-DC converter controllers. Low on-resistance (Ron) and extended temperature range from -40°C to 85°C with full operation up to 150°C junction temperature allows these PoE-PD controllers to achieve record power levels while operating in harsh environments.