IGBTs increase efficiency & reduce conduction losses

Built on Vishay's proprietary Trench PT IGBT technology, the devices achieve a smaller size than planar IGBTs, providing designers with higher current density and lower thermal resistance (junction-to-case) without compromising on performance. Low collector-to-emitter voltage enables extremely low conduction losses, while their turn-off switching energy is 50% lower than previous-gen devices for increased efficiency and long-term reliability.

The half-bridge VS-GP100TS60SFPbF, VS-GP300TD60S and VS-GP400TD60S combine Trench PT IGBTs with HEXFRED and FRED Pt anti-parallel diodes in the INT-A-PAK package and dual INT-A-PAK package with an extremely low profile of 17mm. The single-switch VS-GP250SA60S features the SOT-227 package, provides very low typical stray inductance under 5nH and is UL-approved file E78996.

The RoHS-compliant modules feature operating frequencies to 1kHz, 600V collector-to-emitter voltages and continuous collector current from 100 to 400A. The devices can be directly mounted to heatsinks and offer low EMI to reduce snubbing requirements.

Samples and production quantities of the IGBT power modules are available now, with lead times of 8-10 weeks for larger orders.