Hitachi high voltage IGBTs implement new E2 series technology
Hitachi's Power Devices Division has announced two high voltage IGBT modules. The new 3.3KV MBN1000E33E2 and MBN1500E33E2 IGBT modules offer a current rating of 1000 Amp and 1500 Amp respectively. The new modules are manufactured using Hitachi’s new E2 series fine pattern silicon process technology which enables a more cost effective production process, increased current capability and an increase in the active silicon cell area. The use of E2 series technology enables the new MBN1000E33E2 and MBN1500E33E2 IGBTs to achieve a higher current rating than existing E series products.
Neil Markham, Product Marketing Manager at Hitachi Power Devices Division commented The new E2 series process provides excellent technical benefits. Both the existing E series and the new E2 series products have similar turn-on and turn-off characteristics using a planar gate. This allows the same gate driver unit (GDU) from existing designs to be used in new higher specification E2 series designs. Not having to redesign and implement complex gate driver changes can provide a significant reduction in time to market for new designs. Additionally, the implementation of the E2 series technology results in an IGBT that consumes less power, with a lower conduction loss more than compensating soft switching characteristics.
The MBN1000E33E2 is available in a small footprint package and the MBN1500E33E2 is available in a large footprint package. Typical applications for Hitachi’s new IGBT modules include propulsion and auxiliary power systems, renewable energy, power conditioning and heavy industrial systems.
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