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Hitachi's Power Devices Division exhibiting new IGBT technology at PCIM 2009

31st March 2009
ES Admin
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Hitachi Europe Ltd, Power Devices Division (PDD) will exhibit its leading-edge IGBT technology and the latest power semiconductors modules at PCIM 2009 which is being held from May 12th to May 14th 2009 at the Exhibition Centre Nuremburg, Germany.

Hitachi PDD is a leading global developer and manufacturer of power semiconductor modules. With an established heritage for providing high quality and proven reliability Hitachi PDD is able to offer a comprehensive range of power semiconductors including IGBTs, high voltage ICs and power diodes. Hitachi PDD will be hosting the latest developments in Hitachi’s E2 series IGBT technology. The new E2 series IGBTs implement a new fine pattern silicon process which enables the active cell area to be increased. The benefits provided by the new E2 series process enable a more cost effective production process, increased current capability, improved short circuit durability and similar switching characteristics as existing E series products. Time to market for existing users of E series IGBTs migrating to E2 series IGBTs can therefore be significantly reduced.

Hitachi IGBTs, HVICs and Diodes are developed to encompass advanced technology and durable build quality to meet the highest quality standards. Hitachi PDD supports customers in a wide range of industry sectors including renewable energy, medical, transportation, automotive and industrial.

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