Harnessing the advanced features of GaNPX packaging

16th December 2014

Nat Bowers

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Whitepaper

GaN Systems has announced an application note for design engineers which sets out thermal design guidelines and PCB layout choices for its enhancement mode power switching transistors, which are supplied in its proprietary GaNPX device packaging. These are the first discrete power devices to be embedded in a laminate construction (in which conventional packaging techniques, such as clips, wire bonds and moulding compounds have been replaced with galvanic processes).

Advanced design features of GaNPX packaging significantly increase the current carrying capability of GaN Systems’ devices and significantly reduce critical loop inductance. This makes driving the high speed, high current switches far easier.

The application note provides a thermal analysis of GaN Systems’ GS66508P E-mode GaN, 34A, 41mΩ power switch, together with diagrams showing its thermal dissipation paths and further explanation of how heat is dissipated by the GaNPX packaging design.

The second part of the application note looks at the key PCB factors to consider when designing with GaNPX devices: the heat spreading copper pad and the design of the thermal vias. The third section contains a thermal analysis of three different PCB layouts with different copper layers and thicknesses and looks at details of the optimum layout.

Lastly, there is a section looking at how designers can utilise the maximum power capability of GaN Systems’ devices and estimate the maximum power capacity of the system they are designing.