Half bridge GaN driver with adjustable dead-time

24th August 2018

Anna Flockett

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The LMG1210 is a 200V, half-bridge high performance gallium nitride field effect transistor (GaN FET) driver designed for applications requiring high switching speed, minimised dead time, as well as high efficiency. Drive voltage is precisely controlled by an internal LDO to 5V when higher auxiliary voltages are used.

The LMG1210 GaN driver is designed for ultra-high frequency applications and features adjustable dead-time capability, very small propagation delay, as well as 1.5-ns high-side low-side matching to optimise system efficiency.

Additional parasitic capacitance across the GaN FET is minimised to less than 1pF to reduce additional switching losses. An external bootstrap diode is used to charge the high-side bootstrap capacitor to allow optimal selection for the circuit operating conditions.

An internal switch turns the bootstrap diode off when the low side is not on, effectively preventing the high-side bootstrap from overcharging and minimising the reverse recovery charge when a silicon diode is used as the bootstrap diode.

The GaN driver can operate in two different modes: independent input mode (IIM) and PWM mode. In the IIM each of the outputs is independently controller by a dedicated input. In PWM mode the two complementary output signals are generated from a single input, and the user can adjust the dead time from 0-20ns for each edge. The LMG1210 operates over a wide temperature range from –40 to 125°C and is offered in a low-inductance WQFN package.

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