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CISSOID Releases HADES, a High Temperature and High Reliability Isolated Gate Driver for High Density Power Converters

2nd December 2011

Cissoid

ES Admin

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CISSOID launched HADES, the first isolated gate driver solution designed to drive high temperature power transistors, specifically (but not exclusively) Silicon carbide (SiC) and Gallium nitride (GaN) fast-switching devices. With HADES, system engineers can develop power converters that are 5 times smaller and lighter than before, with better efficiency. They will also get power converters able to operate in high temperature ambiance if required. No matter what the ambient temperature is, the life time of the system will be an order of magnitude longer than traditional solutions.

HADES has been designed to drive seamlessly Silicon Carbide (SiC) power transistors, which have low switching losses. HADES can switch them at high frequencies, which means smaller and lighter passive and magnetic components. Furthermore, thanks to its ability to sustain high temperatures, HADES® can be located next to the power transistors which reduces parasitic capacitances and inductances, and that further improves the associated losses and delays in the system.

HADES is a reference design and an Evaluation Board delivered with full documentation. It can drive two SiC MOSFET power switches on a DC bus voltage up to 1200V. The Reference design is scalable up to +/-20A gate current, while the Evaluation Board features +/-4A. A specific board flavour for normally-On JEFTs will also be available, and other types of switching devices (normally-On/Off JFETs, BJTs and IGBTs) can be supported with minor changes.