Power
Industry-Leading 1800V RC-IGBT with Monolithic Integrated Diode from Toshiba
Toshiba has announced an IGBT with an integrated reverse recovery diode that offers an industry-leading voltage rating of 1800V. The GT40WR21 will be ideal for induction heating and induction cooking designs and other applications demanding high-performance voltage resonator inverter switching.
The Toshiba’s new device is rated for a collector current (IC) of 40A and can handle peak currents of 80A for 1ms. Typical saturation voltage at 40A is only 2.9V. Maximum collector power dissipation at 25°C is 375W. The integrated diode is rated for a forward current of 20A and a peak current (for 100µs) of 80A.
As with previous models in Toshiba’s N-channel IGBT family, the GT40WR21 can support high-temperature operation with a maximum junction temperature (Tj) of 175°C. Low turn-off switching losses ensure high-efficiency operation.
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