Vishay's Power Module Series has Improved Current Ratings

The new devices feature a high blocking voltage of up to 1600 V, a high dV/dt of 1000 V/µs, a high RMS voltage isolation capability of 3500 V, and a high surge capability of up to 3000 A. In addition to standard products with the configurations and ratings mentioned above, custom versions of the Gen VII modules, which can accommodate silicon die with dimensions up to 500 mils by 500 mils, are readily available with customer-specified parameters to deliver outstanding performance in specific applications.

Beyond being entirely lead (Pb)-free and RoHS-compliant, the new package construction of the Gen VII power modules eliminates the traditional copper base plate and instead features an exposed direct bonded copper substrate, which improves thermal performance by 20% and reduces product weight to just 75 g. An aluminum/copper clad wire bond interconnection improves reliability during power cycling and increases repeatability in the manufacturing process. The new construction also serves to eliminate certain process steps requiring the use of chemicals, and thus promotes cleaner and more environmentally-friendly manufacturing.

Vishay's Gen VII power modules are typically used as the isolated power module in half-bridge, center-tab common anode, and common cathode configurations in high-voltage regulated power supplies, temperature and motor control circuits, uninterruptible power supplies (UPS), battery chargers, and many other industrial applications.

Current ratings for the Gen VII modules range from 26 A to 105 A for the diode and thyristor combinations and from 110 A to 400 A for the Schottky rectifier combinations. Reverse voltage ranges from 400 V to 1600 V for the diodes and thyristors and from 30 V to 150 V for the Schottky rectifiers. Maximum junction temperature ratings for the modules range from 125°C to 175°C.