GaN power stage cuts EMI, boosts power-stage efficiency

The device is an 80V, 10A integrated GaN field-effect transistor (FET) power stage that consists of a high-frequency driver and two 15milliohm GaN FETs in a half-bridge configuration.

It significantly reduces electromagnetic interference (EMI) while increasing power-stage efficiency by minimising packaging parasitic inductances in the critical gate-drive loop, and it features advanced multichip packaging technology.

The device is optimised to support power-conversion topologies with frequencies up to 5MHz.

Transistor–transistor logic (TTL)-compatible inputs can withstand input voltages up to 12V regardless of the V_CC voltage.

This allows the inputs to be directly connected to the outputs of an analogue PWM controller with up to 12V power supply, eliminating the need for a buffer stage.

The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.

Mouser is also stocking the LMG5200EVM-02 evaluation module, designed to provide engineers with a complete working power stage with an external PWM signal.

The board can be configured as a buck converter, boost converter, or other converter topology using a half bridge.

It can be used to evaluate the performance of the LMG5200 as a hard-switched converter to sample measurements such as efficiency, switching speed and voltage change over time (dV/dt).