GaN HEMTs feature new topologies and current modulation

28th January 2019

Mick Elliott

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Datasheet

The CoolGaN gallium nitride (GaN) HEMTs from Infineon Technologies are in stock at Mouser Electronics. Featuring high efficiency and power density, the CoolGaN high-electron-mobility transistors (HEMTs) facilitate high-speed switching in semiconductor power supplies.

Suitable for both hard- and soft-switching topologies, the CoolGan HEMTs are ideal for applications such as wireless charging, switched mode power supply (SMPS), telecommunications, hyperscale data centres, and servers.

The HEMTs offer 10 times’ lower output charge and gate charge compared to silicon transistors, as well as ten times’ higher breakdown field and double the mobility.

Optimised for turn-on and turn-off, the devices feature new topologies and current modulation to deliver innovative switching solutions.

Surface-mount packaging ensures that switching capabilities are fully accessible, while the devices’ compact design enable their use in a variety of limited-space applications.

Infineon’s CoolGaN Gallium Nitride HEMTs are supported by the EVAL_1EDF_G1_HB_GAN and EVAL_2500W_PFC_G evaluation platforms.

The EVAL_1EDF_G1_HB_GAN board features a CoolGaN 600 V HEMT and an Infineon GaN EiceDRIVER gate driver IC to enable engineers to evaluate high-frequency GaN capabilities in the universal half-bridge topology for converter and inverter applications.

The EVAL_2500W_PFC_G board includes CoolGaN 600V e-mode HEMTs, a CoolMOS C7 Gold superjunction MOSFET, and EiceDRIVER gate driver ICs to deliver a 2.5 kW full-bridge power factor correction (PFC) evaluation tool that boosts system efficiency above 99% in energy-critical applications like SMPS and telecom rectifiers.