GaN HEMT Amplifier delivers World’s Highest PAE of 67% allowing the replacement of bulky TWTAs

Mitsubishi Electric achieves this record figure by placing individual harmonic tuning circuits in front of each GaN HEMT cell on the substrate. Basically this means that every GaN HEMT is controlled via an optimised harmonic tuning circuit consisting of a MIM capacitor and a spiral inductor. In addition, the PAE is improved by the GaN HEMT’s second harmonic impedance providing a highly-accurate input control. The new device delivers a high output power of more than 100W or, respectively, 50dBm.

Measuring just 17.4mm x 24.0mm x 4.3mm and with a mass of only 7.1g Mitsubishi Electric’s new GaN HEMT will allow for the design of smaller and lighter transmitter devices helping microwave communication satellites to save power. This new semiconductor will accelerate the replacement of the currently-used traveling wave tube amplifiers (TWTAs) with GaN HEMT semiconductor amplifiers resulting in significantly smaller, lighter and more efficient satellite transponders.