GaN FET doubles power density in industrial and telecom applications

TI's family of GaN FET devices provides a smart alternative to traditional cascade and stand-alone GaN FETs by integrating functional and protection features to simplify design, enable greater system reliability and optimise the performance of high voltage power supplies.

With integrated less than 100ns current limiting and overtemperature detection, the devices protect against unintended shoot-through events and prevent thermal runaway, while system interface signals enable a self-monitoring capability.

Key features and benefits of the LMG3410R050, LMG3410R070 and LMG3411R070

• Smaller, more efficient solutions: TI's integrated GaN power stage doubles power density and reduces losses by 80% compared to silicon Metal-Oxide Semiconductor Field-Effect Transistors (MOSFETs). Each device is capable of fast, 1MHz switching frequencies and slew rates of up to 100V/ns.
• System reliability: The portfolio is backed by 20 million hours of device reliability testing, including accelerated and in-application hard switch testing. Additionally, each device provides integrated thermal and high speed, 100ns overcurrent protection against shoot-through and short circuit conditions.
• Devices for every power level: Each device in the portfolio offers a GaN FET, driver and protection features at 50mΩ or 70mΩ to provide a single-chip solution for applications ranging from sub-100W to 10kW.

Visit TI at electronica
Texas Instruments is showcasing a 10kW cloud-enabled grid link demonstration in Hall C4 - Booth 131 at electronica at Messe München in Germany.