GaN enables 50% transistor size reduction

GaN Systems is the first company to have developed and brought a comprehensive product range of devices with current ratings from 7 to 250A to the global market - its Island Technology die design, combined with its low inductance and thermally efficient GaNPX packaging and Drive Assist technology means the company’s GaN transistors offer a 40-fold improvement in switching and conduction performance over traditional silicon MOSFETs and IGBTs. Devices are available now through its worldwide distribution network.

“We were somewhat surprised to see announcements at last week’s PCIM power electronics exhibition and conference that trumpeted gallium nitride 600V, 15A devices in 8x8mm Dual-Flat No-lead (DFN) packaging as the ‘industry’s smallest’ enhancement mode devices - our part is clearly much smaller. But I suppose this is just an indication of how quickly the GaN market is moving, and a positive indication that silicon has reached its limits,” commented Jim Witham, CEO GaN Systems. “Our message to designers in applications as diverse as flat screen TVs, games consoles, washing machines, inverters, electric vehicles, motors and wider is the same: if you are not on-board with GaN, you will be left behind by your competitors.”