Gallium nitride transistors released in updated design

The new GaN transistors GS-065-060-3-B/T provide low R_DS(on) (25 mΩ) and feature a 60 A IDS rating and GaN Systems’ Island Technology cell layout for high-current die performance and yield.

The devices feature an updated design and are offered in GaNpx packaging that enables low inductance and low thermal resistance in a small package.

The GS-065-060-3-B is bottom-side cooled; the GS-065-060-3-T is top-side cooled.

Both offer low junction-to-case thermal resistance for demanding high-power applications, including solar inverters, energy storage systems, on-board chargers, uninterruptable power supplies, industrial motor drives and wireless power transfer.

 Additional key features of the new GaN transistors  include:

• Ultra-low FOM
• Simple gate drive requirements (0 V to 6 V)
• Transient tolerant gate drive (-20 / +10 V)
• High switching frequency (> 10 MHz)
• Fast and controllable fall and rise times
• Reverse conduction capability
• Zero reverse recovery loss
• Small footprint
• Dual gate pads for optimal board layout
• I_DS(max): 60 A