First trench-type SiC MOSFET reduces resistance

The chip size remains the same, making it possible to decrease power loss in industrial inverters and power supplies to power conditioners for solar power systems.

Rather than a single trench structure, the company has adopted a double-trench technology, and this third generation device operates at 1,700V. Bare die is sampling now and mass production, in a TO247 package will be in mass production in Q3.

According to Noburhiro Hase, Senior Manager, Product Device Marketing, Rohm Semiconductor, the reduction in channel and jfet resistance or chip area allows designers to choose to make a smaller footprint, offering the same performance, or the same size device with increased performance.

The SiC MOSFET trench structure maximises SiC characteristics, and is claimed to represent a milestone with significant implications worldwide. Optimum performance is achieved by combining exceedingly low loss with high-speed switching performance. Efficiency during power conversion is improved and waste eliminated during production, contributing to increased miniaturisation, lighter weight, and energy savings. The company is developing full SiC modules that integrate both SiC MOSFETs and SBDs (Schottky Barrier Diodes).

The SiC power module incorporates the trench-type SiC MOSFETs in a two-in-one circuit with integrated SiC SBDs. The 1,200V/180A module features the same rated current as Si IGBT modules while reducing switching loss by approximately 42% compared with planar-type SiC MOSFETs.

The initial BSM180D12P3C007 will be joined by three models for each rated voltage (650 and 1,200V), with rated currents of 95 and 118A respectively.