Fairchild Semiconductor’s Generation II XS DrMOS Provides Designers a Thinner Solution for Ultrabook Applications

The FDMF6708N integrates a driver IC, two power MOSFETs, and a bootstrap Schottky diode into a thermally enhanced, 6x6mm2 PQFN Intel® DrMOS v4.0 standard package.

The FDMF6708N provides designers a 50 percent smaller footprint while delivering high-switching frequency and high power density. The device’s Zero Cross Detect (ZCD) feature improves light load efficiency for extended battery life. Unlike the traditional discrete solution, this device also provides high efficiency at full load using the latest control FET and SyncFET™ technology as well as clip-bond packaging with lower source inductance. Traditional discrete solutions require larger PCB space, longer layout traces, higher inductances, and more components resulting in poor thermal performance at the higher frequencies required to enable lower profile magnetics.

Available in a PQFN 6x6mm2 package, the FDMF6708N device offers 2.5 percent better efficiency at peak load (15A) and 6 percent better efficiency at full load (30A) than the nearest competitor. The device is suitable for use in applications requiring 600KHz – 1.0MHz switching frequency, even with a 20V input voltage. This enables designers to use smaller and thinner inductors and capacitors for reduced solution size, while meeting thermal requirements. The FDMF6708N device helps resolve the challenges of designing an Ultrabook™ that is cooler, thinner, and more energy efficient.

Features and Benefits:


• Over 1.0MHz switching frequency capability reduces overall solution size, saving up to 50 percent of board space, and resulting in thinner systems by reducing inductor height
• Zero Cross Detect (ZCD) circuitry for improved light load performance
• PQFN 6x6mm2 Intel® DrMOS v4.0 standard footprint, multi source solution Multi Chip Module (MCM)
• 2.5 percent better efficiency at peak load (15A) and 6 percent better efficiency at 30A full load, (19Vin, 1Vout, 800KHz) when compared to the nearest competitor resulting in longer battery life
Fairchild Semiconductor’s Generation II XS™ DrMOS series provides industry-leading technology to meet the energy efficiency and form factor challenges encountered in today’s designs. Generation II XS DrMOS devices are part of Fairchild’s energy efficient power analog, power discrete and optoelectronics solutions that maximize energy savings in power sensitive applications.

Price: US $1.86 in 1,000 quantity pieces

Availability: Samples available upon request.

Delivery: 8-12 weeks ARO