eGaN FET for high power density solutions

18th December 2020

Alex Lynn

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Efficient Power Conversion has advanced the performance capability of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2055 (3 mΩ, 40 V) eGaN FET. This device is suited for applications with demanding requirements for performance in space-constrained form factors including USB-C batter chargers and ultra-thin point-of-load (POL) converters.

Other low-voltage applications benefiting from the fast-switching speeds and ultra-high efficiency of the EPC2055 include LED lighting, 12 to 24V input motor drivers, and lidar systems for robotics, drones, and autonomous cars.

Alex Lidow, EPC’s Co-founder and CEO, said: “The EPC2055 is a very good example of the rapid evolution of GaN FET technology. This 40 volt device offers both smaller size and reduced parasitics compared with previous-generation 40V GaN FETs and at lower cost; thus, offering designers both improved performance and cost savings.”

The EPC90132 development board is a 40V maximum device voltage, 25A maximum output current, half bridge with onboard gate drives, featuring the EPC2055 eGaN FETs. This 2x2” board is designed for optimal switching performance and contains all critical components for easy evaluation of the EPC2055. Both the EPC2055 and EPC90132 are available to order from Digi-Key.