E-HEMT boasts the market's highest current capability

The device is based on GaN Systems' ultra-low FOM, packaged in low inductance and thermally efficient GaNPX packaging and measures 9.0x7.6x0.45mm. Additional features of the 650V E-HEMT include reverse current capability, integral source sense and zero reverse recovery loss. Dual gate pads help design engineers achieve optimal board layout. The GS65516T suits high frequency, high efficiency power conversion applications such as on-board battery chargers, 400V DC/DC conversion, inverters, UPS and VFD motor drives, AC/DC power supplies (PFC and primary) and VHF small form factor power adapters. The device is available to customers packaged on tape and reel or mini-reel, through GaN Systems’ worldwide distribution partners. Pricing is available on request.

“GaN is real and happening right now.” says Girvan Patterson, President, GaN Systems. “Our devices boast industrial-scale power and since becoming available commercially last year, hundreds of leading companies across the globe have embraced our technology to make sure they are among the first to market with new products that bring the benefits of GaN to products ranging from solar inverters to ultra-slim TVs. The major players are well aware that gallium nitride device technology is a true game-changer. GaN Systems’ core IPs make our devices easier for designers to work with, and we are now seeing real products that harness GaN’s power come to market. For example, on our stand here at PCIM, we are showing a vehicle power inverter from leading US technology company, DRS Technologies, a 2kWh tactical power pack from Virideon, and a 5kW three-phase inverter power module from LS Industrial Systems of Korea.”