Dual-sided cooling improves MOSFET heat dissipation
Toshiba Electronics Europe has revealed that its high-efficiency, low-voltage MOSFETs are now available in ultra-compact DSOP Advance package options, which offer dual-sided cooling to improve heat dissipation by more than 30%. This enables designers to minimise the PCB temperature and improve performance without board space penalties in high-component-density applications.
Sharing the same 5x6mm footprint as an SOP Advance device, the DSOP Advance reduced operating temperatures by more than 34% (in comparative tests, with a suitable heatsink, for 30V MOSFETs at currents above 30A). The reduced thermal resistance of the DSOP Advance package can also eliminate the need for a heatsink.
The DSOP Advance packages will be available with 30-100V existing UMOS VIII-H and new UMOS IX-H families of MOSFET technologies, which combine low output capacitance with claimed industry-leading RDS(ON) to deliver ultra-efficient switching performance.
The DSOP Advance MOSFETs are suitable for applications such as high-power density, high-performance switching designs including synchronous rectification circuitry in servers and telecomms power supply equipment, as well as power tools.
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